S9014 (300-400)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=35V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 μA DC current gain hFE VCE=5V, IC= 1mA 200 Max Unit 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V fT Transition frequency VCE=5V, IC= 10mA f=30MHz 150 MHz CLASSIFICATION OF hFE Rank Range L H 200-450 450-1000 B,Dec,2011 Typical Characterisitics S9014 hFE Static Characteristic 8 1000 Ta=100℃ 18uA Ta=25℃ hFE 16uA DC CURRENT GAIN (mA) 20uA 6 IC COLLECTOR CURRENT COMMON EMITTER Ta=25℃ 14uA 4 12uA 10uA 8uA 2 —— IC 6uA 100 4uA COMMON EMITTER VCE= 5V IB=2uA 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 (V) 10 COLLECTOR CURRENT IC VBEsat —— IC 100 (mA) IC 2 1 0.1 Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1 VCE 10 0.1 8 Ta=100℃ Ta=25℃ Ta=100℃ β=20 β=20 0.01 0.1 1 10 COLLECTOR CURRENT IC (mA) 10 COLLECTOR CURRENT —— VBE fT 1000 Ta=25℃ 1 COMMON EMITTER VCE= 5V 0.1 0.0 0.3 0.6 0.9 fT Ta=100℃ 10 100 TRANSITION FREQUENCY (mA) IC COLLECTOR CURRENT 1 IC 100 (mA) —— IC (MHz) 100 IC 0.1 0.1 100 10 COMMON EMITTER VCE=5V Ta=25℃ 1 0.1 1.2 1 BASE-EMMITER VOLTAGE VBE (V) 100 Cob/ Cib —— 10 COLLECTOR CURRENT VCB/ VEB PC 250 —— IC 100 (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) Cib 10 CAPACITANCE C (pF) Ta=25 ℃ Cob 1 0.1 0.1 1 REVERSE VOLTAGE 10 VR (V) 20 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Dec,2011